HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD

CTZ 2.6 to 47

500mW

DO- 35

Glass Axial Package

FEATURES

These Zeners Are Best Suited For Industrial Purpose , Military & Space applications.

Hermetically Sealed Glass With Double Stud And Glass Passivated Chip Provides Excellent Stabililty and

Reliability.

ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

VALUE

UNIT

500

mW

Surge Power Dissipation

5W

tp=8.3mS

Junction Temperature

175

ºC

Storage Temperature

T

stg

-65 to+175

ºC

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

VALUE UNIT

Thermal Resistance

0.3

ºC/mW

Junction Ambient

Forward Voltage

1.5

V

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DEVICE

Temp.

Coeff.of

MAX

MAX

Zener Voltage

MAX

MAX

typ

(V)

(

Ω)

(mA)

(

Ω)

(mA)

(%/ºC )

(

µA)

(V)

(mA)

(mA)

CTZ2.6

2.6

30

20

600

1

-0.085

75

1

147.8

CTZ2.7

2.7

30

20

600

1

-0.085

75

1

168.3

CTZ3.0

3.0

48

20

600

1

-0.075

20

1

148.5

1500

CTZ 3.3

3.3

44

20

600

1

-0.070

10

1

135

1375

CTZ 3.6

3.6

42

20

600

1

-0.065

5

1

126

1260

CTZ3.9

3.9

40

20

600

1

-0.060

5

1

115

1165

CTZ 4.3

4.3

36

20

600

1

-0.055

0.5

1

105

1060

CTZ 4.7

4.7

32

20

600

1

-0.043

10

2

95

965

CTZ 5.1

5.1

28

20

550

1

+/-0.030

5

2

87

890

CTZ 5.6

5.6

16

20

450

1

+/-0.028

10

3

80

810

CTZ 6.2

6.2

6

210

200

1

+0.045

10

4

72

730

CTZ 6.8

6.8

6

20

150

1

+0.050

5

5

65

665

Continental Device India Limited

Data Sheet

Page 1 of 4

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

CTZ2.6_47Rev081001