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CMBTA05 Datasheet(PDF) 1 Page - Continental Device India Limited |
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CMBTA05 Datasheet(HTML) 1 Page - Continental Device India Limited |
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1 / 3 page  Continental Device India Limited Data Sheet Page 1 of 3 CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N–P–N transistor Marking CMBTA05 = 1H CMBTA06 = 1G ABSOLUTE MAXIMUM RATINGS CMBT A05 A06 Collector–base voltage (open emitter) VCBO max. 60 80 V Collector–emitter voltage (open base) VCEO max. 60 80 V Emitter–base voltage (open collector) VEBO max. 4 V Collector current (d.c.) IC max. 500 mA Total power dissipation up to Tamb = 25 °C Ptot max. 250 mW D.C. current gain IC = 100 mA; VCE = 1 V hFE min. 100 Transition frequency at f = 100 MHz IC = 10 mA; VCE = 2 V fT min. 100 MHz Collector–emitter saturation voltage IC = 100 mA; IB = 10 mA VCEsat max. 0.25 V PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 2 1 SOT-23 Formed SMD Package Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
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