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CMBT8098 Datasheet(PDF) 2 Page - Continental Device India Limited |
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CMBT8098 Datasheet(HTML) 2 Page - Continental Device India Limited |
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2 / 4 page  NPN SILICON PLANAR EPITAXIAL TRANSISTORS CMBT8098 CMBT8099 SOT-23 Formed SMD Package ELECTRICAL CHARACTERISTICS (Ta=25º C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS DC Current Gain hFE * IC=1mA, VCE=5V 100 300 IC=10mA, VCE=5V 100 IC=100mA, VCE=5V 75 Collector Emitter Saturation Voltage VCE(sat) * IC=100mA, IB=5mA 0.4 V IC=100mA, IB=10mA 0.3 V Base Emitter On Voltage VBE(on) * CMBT8098 IC=1mA,VCE=5V 0.5 0.7 V CMBT8099 IC=10mA,VCE=5V 0.6 0.8 V Small Signal Characteristics Current Gain Bandwidth Product fT IC=10mA, VCE=5V,f=100MHz 150 MHz Output Capacitance Cobo IE=0, VCB=5V, f=1MHz 6.0 pF Input Capacitance Cibo IC=0, VEB=0.5V, f=1MHz 25 pF *Pulse Test: Pulse Width < 300 µµs, Duty Cycle<2% PIN CONFIGURATION (NPN) 1 = BASE 2 = EMITTER 3 = COLLECTOR 2 1 3 Continental Device India Limited Data Sheet Page 2 of 4 |
Similar Part No. - CMBT8098 |
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Similar Description - CMBT8098 |
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