HANBit

HMN1288DV

URL : www.hbe.co.kr

1

HANBit Electronics Co.,Ltd

Rev. 1.0 (June, 2004)

GENERAL DESCRIPTION

The HMN1288DV Nonvolatile SRAM is a 1,048,576 -bit static RAM organized as 131,072 bytes by 8 bits.

The HMN1288DV has a self-contained lithium energy source provide reliable non -volatility coupled with the unlimited

write cycles of standard SRAM and integral control circuitry, which constantly monitors the single 3.3V, supply for an out-

of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain

the SRAM is unconditionally write -protected to prevent an inadvertent write operation. At this time the integral energy

The HMN1288DV uses extremely low standby current CMOS SRAM

’s, coupled with small lithium coin cells to provide

non-volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.

FEATURES

w Access time : 70, 85, 120, 150 ns

w High-density design : 1Mbit Design

w Battery internally isolated until power is applied

w Industry-standard 32-pin 128K x 8 pinout

w Unlimited write cycles

w 10-years minimum data retention in absence of power

w Automatic write-protection during power-up/power-down

cycles

w Data is automatically protected during power loss

w Conventional SRAM operation; unlimited write cycles

OPTIONS

MARKING

w Timing

70 ns

- 70

85 ns

- 85

120 ns

-120

150 ns

-150

PIN ASSIGNMENT

1

32

12

21

14

19

15

18

10

23

11

22

13

20

2

31

3

30

4

29

6

27

9

24

7

26

5

28

8

25

16

17

NC

NC

/CE

/WE

/OE

32-pin Encapsulated Package

Non-Volatile SRAM Module 1Mbit (128K x 8-Bit), 32Pin-DIP, 3.3V

Part No. HMN1288DV

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