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2N2219A Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. 2N2219A
Description  NPN switching transistors
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 3 page
background image
1997 Sep 03
3
Philips Semiconductors
Product specification
NPN switching transistors
2N2219; 2N2219A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
2N2219
60
V
2N2219A
75
V
VCEO
collector-emitter voltage
2N2219
open base
30
V
2N2219A
open base; IC ≤ 500 mA
40
V
VEBO
emitter-base voltage
open collector
2N2219
5V
2N2219A
6V
IC
collector current (DC)
800
mA
ICM
peak collector current
800
mA
IBM
peak base current
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
800
mW
Tcase ≤ 25 °C
3W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
200
°C
Tamb
operating ambient temperature
−65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
in free air
190
K/W
Rth j-c
thermal resistance from junction to case
50
K/W




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