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2N2219 Datasheet(PDF) 4 Page - NXP Semiconductors

Part No. 2N2219
Description  NPN switching transistors
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 4 page
background image
1997 Sep 03
4
Philips Semiconductors
Product specification
NPN switching transistors
2N2219; 2N2219A
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
2N2219
IE = 0; VCB =50V
10
nA
IE = 0; VCB =50V; Tamb = 150 °C
10
µA
ICBO
collector cut-off current
2N2219A
IE = 0; VCB =60V
10
nA
IE = 0; VCB =60V; Tamb = 150 °C
10
µA
IEBO
emitter cut-off current
IC = 0; VEB =3V
10
nA
hFE
DC current gain
IC = 0.1 mA; VCE =10V
35
hFE
DC current gain
IC = 1 mA; VCE =10V
50
hFE
DC current gain
IC = 10 mA; VCE =10V
75
hFE
DC current gain
IC = 10 mA; VCE =10V; Tamb = −55 °C
2N2219A
35
hFE
DC current gain
IC = 150 mA; VCE = 1 V; note 1
50
hFE
DC current gain
IC = 150 mA; VCE = 10 V; note 1
100
300
hFE
DC current gain
IC = 500 mA; VCE = 10 V; note 1
2N2219
30
2N2219A
40
VCEsat
collector-emitter saturation voltage
IC = 150 mA; IB = 15 mA; note 1
2N2219
400
mV
2N2219A
300
mV
VCEsat
collector-emitter saturation voltage
IC = 500 mA; IB = 50 mA; note 1
2N2219
1.6
V
2N2219A
1V
VBEsat
base-emitter saturation voltage
IC = 150 mA; IB = 15 mA; note 1
2N2219
1.3
V
2N2219A
0.6
1.2
V
VBEsat
base-emitter saturation voltage
IC = 500 mA; IB = 50 mA; note 1
2N2219
2.6
V
2N2219A
2V
Cc
collector capacitance
IE =ie = 0; VCB =10V
8pF
Ce
emitter capacitance
IC =ic = 0; VEB = 500 mV
2N2219A
25
pF
fT
transition frequency
IC = 20 mA; VCE = 20 V; f = 100 MHz;
2N2219
250
MHz
2N2219A
300
MHz
F
noise figure
IC = 0.2 mA; VCE =5V; RS =2kΩ;
f = 1 kHz; B = 200 Hz
2N2219A
4dB




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