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2N1711 Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. 2N1711
Description  NPN medium power transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 3 page
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1997 May 28
3
Philips Semiconductors
Product specification
NPN medium power transistor
2N1711
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
CHARACTERISTICS
Tamb =25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
75
V
VCEO
collector-emitter voltage
open base
50
V
VEBO
emitter-base voltage
open collector
7V
IC
collector current (DC)
500
mA
ICM
peak collector current
1A
IBM
peak base current
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
0.8
W
Tcase ≤ 100 °C
1.7
W
Tcase ≤ 25 °C
3W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
200
°C
Tamb
operating ambient temperature
−65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
in free air
219
K/W
Rth j-c
thermal resistance from junction to case
58.3
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =60V
10
nA
IE = 0; VCB =60V; Tamb = 150 °C
10
µA
IEBO
emitter cut-off current
IC = 0; VEB =5V
5nA
hFE
DC current gain
IC =10 µA; VCE =10V
20
IC = 0.1 mA; VCE =10V
35
IC = 10 mA; VCE = 10 V; note 1
75
IC = 10 mA; VCE =10V; Tamb = −55 °C35
IC = 150 mA; VCE = 10 V; note 1
100
300
IC = 500 mA; VCE = 10 V; note 1
40
VCEsat
collector-emitter saturation voltage
IC = 150 mA; IB = 15 mA; note 1
500
mV
VBEsat
base-emitter saturation voltage
IC = 150 mA; IB = 15 mA; note 1
1.3
V
fT
transition frequency
IC = 50 mA; VCE = 10 V; f = 100 MHz
70
MHz
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
25
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V; f = 1 MHz
80
pF




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