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2N1613 Datasheet(PDF) 4 Page - NXP Semiconductors

Part No. 2N1613
Description  NPN medium power transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 4 page
background image
1997 Apr 11
4
Philips Semiconductors
Product specification
NPN medium power transistor
2N1613
CHARACTERISTICS
Tamb =25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =60V
10
nA
IE = 0; VCB =60V; Tamb = 150 °C
10
µA
IEBO
emitter cut-off current
IC = 0; VEB =5V
10
nA
hFE
DC current gain
IC = 0.1 mA; VCE =10V
20
IC = 10 mA; VCE = 10 V; note 1
35
IC = 10 mA; VCE = 10 V; Tamb = −55 °C20
IC = 150 mA; VCE = 10 V; note 1
40
120
IC = 500 mA; VCE = 10 V; note 1
20
VCEsat
collector-emitter saturation voltage IC = 150 mA; IB =15mA
1.5
V
VBEsat
base-emitter saturation voltage
IC = 150 mA; IB =15mA
1.3
V
Cc
collector capacitance
IE =ie = 0; VCB =10V
25
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V
80
pF
fT
transition frequency
IC = 50 mA; VCE = 10 V; f = 100 MHz
60
MHz




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