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2N1613 Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. 2N1613
Description  NPN medium power transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 3 page
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1997 Apr 11
3
Philips Semiconductors
Product specification
NPN medium power transistor
2N1613
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1. Refer to TO-39 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
75
V
VCEO
collector-emitter voltage
open base
50
V
VEBO
emitter-base voltage
open collector
7V
IC
collector current (DC)
500
mA
ICM
peak collector current
1A
IBM
peak base current
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
0.8
W
Tcase = 100 °C
1.7
W
Tcase ≤ 25 °C
3W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
200
°C
Tamb
operating ambient temperature
−65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
218
K/W
Rth j-c
thermal resistance from junction to case
58.3
K/W




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