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1PS79SB62 Datasheet(PDF) 4 Page - NXP Semiconductors |
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1PS79SB62 Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 8 page  2001 Jan 18 4 Philips Semiconductors Product specification Schottky barrier diode 1PS79SB62 GRAPHICAL DATA handbook, halfpage 2 VF (V) IF (mA) 0 0.4 0.8 1.2 10 1 (1) (3) 10−1 10−2 MGT832 1.6 (2) Fig.2 Forward current as a function of forward voltage; typical values. (1) Tamb = 125 °C. (2) Tamb =85 °C. (3) Tamb =25 °C. handbook, halfpage 020 10 30 VR (V) IR (nA) 40 MGT833 104 103 102 10 1 10−1 (1) (2) (3) Fig.3 Reverse current as a function of reverse voltage; typical values. (1) Tamb = 125 °C. (2) Tamb =85 °C. (3) Tamb =25 °C. handbook, halfpage 010 20 40 0.42 0.22 0.38 MGT834 30 VR (V) Cd (pF) 0.34 0.30 0.26 Fig.4 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tamb =25 °C. |
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