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1PS76SB70 Datasheet(PDF) 4 Page - NXP Semiconductors |
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1PS76SB70 Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 8 page  1998 Jul 16 4 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB70 GRAPHICAL DATA Fig.2 Forward current as a function of forward voltage; typical values. 10 0 0.2 0.4 0.6 0.8 1 1 I F (mA) V (V) F MRA803 (1) (4) (2) (3) 10 2 10 1 10 2 (1) Tamb = 125 °C. (2) Tamb =85 °C. (3) Tamb =25 °C. (4) Tamb = −40 °C. Fig.3 Reverse current as a function of reverse voltage; typical values. MRA805 1 10 10 0 20406080 V (V) R IR ( µA) (1) (3) (2) 2 10 1 10 2 10 3 (1) Tamb = 125 °C. (2) Tamb =85 °C. (3) Tamb =25 °C. 10 1 110 rdiff IF (mA) MRA802 10−1 102 102 103 f = 10 kHz. Fig.4 Differential forward resistance as a function of forward current; typical values. Fig.5 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tamb =25 °C. 0 0.5 1 1.5 2 0 204060 80 MRA804 Cd (pF) V (V) R |
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