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CMPT2222AE Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CMPT2222AE Datasheet(HTML) 1 Page - Central Semiconductor Corp |
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1 / 2 page  MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 6.0 V Collector Current IC 600 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICBO VCB=60V 10 nA ICBO VCB=60V, TA=125°C 10 µA ICEV VCE=60V, VEB=3.0V 10 nA IEBO VEB=3.0V 10 nA BVCBO IC=10µA 100 145 V BVCEO IC=10mA 45 53 V BVEBO IE=10µA 6.0 V VCE(SAT) IC=150mA, IB=15mA 0.92 0.15 V VCE(SAT) IC=500mA, IB=50mA 0.12 0.50 V VBE(SAT) IC=150mA, IB=15mA 0.6 1.2 V VBE(SAT) IC=500mA, IB=50mA 2.0 V hFE VCE=10V, IC=0.1mA 100 210 hFE VCE=10V, IC=1.0mA 100 205 hFE VCE=10V, IC=10mA 100 205 hFE VCE=1.0V, IC=150mA 75 150 hFE VCE=10V, IC=150mA 100 300 hFE VCE=10V, IC=500mA 60 130 fT VCE=20V, IC=20mA, f=100MHz 300 MHz CMPT2222AE ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR SOT-23 CASE Central Semiconductor Corp. TM R1 (20-February 2003) DESCRIPTION: The Central Semiconductor CMPT2222AE is an Enhanced version of the CMPT2222A NPN Switching transistor in a SOT-23 surface mount package, designed for switching applications, interface circuit and driver circuit applications. MARKING CODE: C1PE FEATURED ENHANCED SPECIFICATIONS: ♦ BVCBO from 75V min to 100V min. (145V TYP) ♦ VCE from 1.0V max to 0.5V max. (0.12V TYP) ♦ hFE from 40 to 60 min. (130 TYP) ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Enhanced specification. |
Similar Part No. - CMPT2222AE |
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Similar Description - CMPT2222AE |
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