HY57V561620BT-PI datasheet(4/12 Pages) HYNIX

Part #	HY57V561620BT-PI

Description	4 Banks x 4M x 16Bit Synchronous DRAM

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Manufacturer	HYNIX [Hynix Semiconductor]

Direct Link	http://www.skhynix.com/kor/main.do

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HY57V561620B(L)T-I

Rev.1.3 / Apr. 2003

4

ABSOLUTE MAXIMUM RATINGS

Note :

Operation at above absolute maximum rating can adversely affect device reliability

DC OPERATING CONDITION (TA=-40°C ~ 85°C)

Note :

1.All voltages are referenced to VSS = 0V

2.VIH (max) is acceptable 5.6V AC pulse width with

≤3ns of duration

3.VIL (min) is acceptable -2.0V AC pulse width with

≤3ns of duration

AC OPERATING CONDITION (TA=-40°C ~ 85°C, VDD=3.3 ± 0.3V, VSS=0V)

Note :

1. Output load to measure access time is equivalent to two TTL gates and one capacitor (50pF)

For details, refer to AC/DC output circuit

Parameter

Symbol

Rating

Unit

Ambient Temperature

TA

-40~85

°C

Storage Temperature

TSTG

-55 ~ 125

°C

Voltage on Any Pin relative to VSS

VIN, VOUT

-1.0 ~ 4.6

V

Voltage on VDD relative to VSS

VDD, VDDQ

-1.0 ~ 4.6

V

Short Circuit Output Current

IOS

50

mA

Power Dissipation

PD

1W

Soldering Temperature

⋅ Time

TSOLDER

260

⋅ 10

°C ⋅ Sec

Parameter

Symbol

Min

Typ.

Max

Unit

Note

Power Supply Voltage

VDD, VDDQ

3.0

3.3

3.6

V

1

Input High Voltage

VIH

2.0

3.0

VDD + 0.3

V

1,2

Input Low Voltage

VIL

- 0.3

0

0.8

V

1,3

Parameter

Symbol

Value

Unit

Note

AC Input High / Low Level Voltage

VIH / VIL

2.4 / 0.4

V

Input Timing Measurement Reference Level Voltage

Vtrip

1.4

V

Input Rise / Fall Time

tR / tF

1

ns

Output Timing Measurement Reference Level

Voutref

1.4

V

Output Load Capacitance for Access Time Measurement

CL

50

pF

1

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