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STC5DNF30V Datasheet(PDF) 4 Page - STMicroelectronics

Part # STC5DNF30V
Description  Dual N-channel 30V - 0.032??- 4.5A - TSSOP8 2.7V-Driver STripFET??Power MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STC5DNF30V Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STC5DNF30V
4/12
2
Electrical characteristics
(TJ =25°C unless otherwise specified)
Table 3.
On/off
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 250µA, VGS = 0
30
V
IDSS
Zero gate voltage
drain current
(VGS = 0)
VDS = Max rating
VDS = Max rating,TC=125°C
1
10
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 8V
±100
nA
VGS(th)
Gate threshold
voltage
VDS = VGS, ID = 250µA
0.6
V
RDS(on)
Static drain-source on
resistance
VGS = 4.5V, ID = 2.3A
VGS = 2.7V, ID = 2.3A
0.032
0.036
0.035
0.040
Ω
Ω
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
Forward
transconductance
VDS =25V ; ID = 2.3A
9.5
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1 MHz,
VGS = 0
460
200
50
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 16V, ID = 4.5A,
VGS = 4.5V
(see Figure 14)
8.5
1.8
2.4
11.5
ns
ns
ns
Table 5.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tr
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 10V, ID = 2.3A,
RG= 4.7Ω VGS = 4.5V
(see Figure 13)
7
33
27
10
ns
ns
ns
ns
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
VDD = 16V, ID = 2.3A,
RG =4.7Ω, VGS = 4.5V
(see Figure 17)
26
11
21
ns
ns
ns


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