MBD110DWT1 datasheet(1/4 Pages) ETL

Part #	MBD110DWT1

Description	Dual SCHOTTKY Barrier Diodes

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Manufacturer	ETL [E-Tech Electronics LTD]

Direct Link	http://e-tech.com.hk

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MBD54–1/4

1

3

2

Dual SCHOTTKY Barrier Diodes

MAXIMUM RATINGS (T = 125°C unless otherwise noted)

Rating

Symbol

Value

Unit

Reverse Voltage

V R

30

Volts

Forward Power Dissipation

P F

@ T A = 25°C

150

mW

Derate above 25°C

1.2

mW/°C

Forward Current (DC)

I F

200 Max

mA

Junction Temperature

T J

125 Max

°C

Storage Temperature Range

T stg

–55 to +150

°C

DEVICE MARKING

MBD54DWT1 = BL

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE)

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage (I R = 10

µA)

V (BR)R

30

—

Volts

Total Capacitance (V R = 1.0 V, f = 1.0 MHz)

C T

—

7.6

10

pF

Reverse Leakage (V R = 25 V)

I R

—

0.5

2.0

µAdc

Forward Voltage (I F = 0.1 mAdc)

V F

—

0.22

0.24

Vdc

Forward Voltage (I F = 30 mAdc)

V F

—

0.41

0.5

Vdc

Forward Voltage (I F = 100 mAdc)

V F

—

0.52

1.0

Vdc

Reverse Recovery Time

t rr

—

5.0

ns

(I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc) Figure 1

Forward Voltage (I F = 1.0 mAdc)

V F

—

0.29

0.32

Vdc

Forward Voltage (I F = 10 mAdc)

V F

—

0.35

0.40

Vdc

Forward Current (DC)

I F

—

200

mAdc

Repetitive Peak Forward Current

I FRM

—

300

mAdc

Non–Repetitive Peak Forward Current (t <1.0s) I FSM

—

600

mAdc

6

4

5

SOT–363

CASE 419B–01, STYLE 6

MBD54DWT1

12

3

Anode

N/C

Cathode

N/C

Anode

65

4

These SCHOTTKY barrier diodes are designed for high speed switching

applications, circuit protection, and vol tage clamping. Extremely low forward

voltage reduces conduction loss. Miniature surface mount package is excellent

for hand held and portable applications where space is limited.

• Extremely Fast Switching Speed

• Low Forward Voltage — 0.35 V @ I F = 10 mAdc

30 VOLTS

DUAL HOT–CARRIER

DETECTOR AND SWITCHING

DIODES

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