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MBD110DWT1 Datasheet(PDF) 1 Page - E-Tech Electronics LTD |
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1 / 4 page MBD54–1/4 1 3 2 Dual SCHOTTKY Barrier Diodes MAXIMUM RATINGS (T = 125°C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage V R 30 Volts Forward Power Dissipation P F @ T A = 25°C 150 mW Derate above 25°C 1.2 mW/°C Forward Current (DC) I F 200 Max mA Junction Temperature T J 125 Max °C Storage Temperature Range T stg –55 to +150 °C DEVICE MARKING MBD54DWT1 = BL ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (I R = 10 µA) V (BR)R 30 — — Volts Total Capacitance (V R = 1.0 V, f = 1.0 MHz) C T — 7.6 10 pF Reverse Leakage (V R = 25 V) I R — 0.5 2.0 µAdc Forward Voltage (I F = 0.1 mAdc) V F — 0.22 0.24 Vdc Forward Voltage (I F = 30 mAdc) V F — 0.41 0.5 Vdc Forward Voltage (I F = 100 mAdc) V F — 0.52 1.0 Vdc Reverse Recovery Time t rr — — 5.0 ns (I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc) Figure 1 Forward Voltage (I F = 1.0 mAdc) V F — 0.29 0.32 Vdc Forward Voltage (I F = 10 mAdc) V F — 0.35 0.40 Vdc Forward Current (DC) I F — — 200 mAdc Repetitive Peak Forward Current I FRM — — 300 mAdc Non–Repetitive Peak Forward Current (t <1.0s) I FSM — — 600 mAdc 6 4 5 SOT–363 CASE 419B–01, STYLE 6 MBD54DWT1 12 3 Anode N/C Cathode Cathode N/C Anode 65 4 These SCHOTTKY barrier diodes are designed for high speed switching applications, circuit protection, and vol tage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. • Extremely Fast Switching Speed • Low Forward Voltage — 0.35 V @ I F = 10 mAdc 30 VOLTS DUAL HOT–CARRIER DETECTOR AND SWITCHING DIODES |
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