HANBit

HDD16M64F8

URL : www.hbe.co.kr

9

HANBit Electronics Co.,Ltd.

REV 1.0(August.2002)

4.

The maximum limit for this parameter is not a device limit. The device will operate with a great value for this

parameter, but system performance (bus turnaround) will degrade accordingly.

SIMPLIFIED TRUTH TABLE

COMMAND

CKE

n-1

CKE

n

/CS

/R

A

S

/C

A

S

/WE

DM

BA

0,1

A10/

AP

A11

A9~A0

NOTE

Register

Extended MRS

H

X

L

L

L

L

X

OP code

1,2

Register

Mode register set

H

X

L

L

L

L

X

OP code

1,2

Auto refresh

H

3

Entry

H

L

L

L

L

H

X

X

3

L

H

H

H

3

Refresh

Self

refres

h

Exit

L

H

H

X

X

X

X

X

3

Bank active & row addr.

H

X

L

L

H

H

X

V

Row address

Auto

precharge

disable

L

4

Read &

column

address

Auto

precharge

eable

H

X

L

H

L

H

X

V

H

Column

Address

(A0 ~ A9)

4

Auto

precharge

disable

H

L

4

Write &

column

address

Auto

precharge

enable

H

X

L

H

L

L

X

V

H

Column

Address

(A0 ~ A9)

4,6

Burst Stop

H

X

L

H

H

L

X

X

7

Bank selection

V

L

Precharg

e

All banks

H

X

L

L

H

L

X

X

H

X

5

H

X

X

X

Entry

H

L

L

V

V

V

X

Clock suspend or

active power down

Exit

L

H

X

X

X

X

X

X

H

X

X

X

Entry

H

L

L

H

H

H

X

H

X

X

X

Precharge power

down mode

Exit

L

H

L

V

V

V

X

X

DM

H

X

V

X

8

H

X

X

X

No operation command

H

X

L

H

H

H

X

X

(V=Valid, X=Don't care, H=Logic high, L=Logic low)

Notes :

1.

OP Code : Operand code

A0 ~ A11 & BA0 ~ BA1 : Program keys. (@ MRS)

2.

MRS can be issued only at all banks precharge state.

A new command can be issued after 2 CLK cycles of MRS.

3.

Auto refresh functions are as same as CBR refresh of DRAM.

The automatical precharge without row precharge command is meant by "Auto".

Auto/self refresh can be issued only at all banks precharge state.

4.

BA0 ~ BA1 : Bank select addresses.

If both BA0 and BA1 are "Low" at read, write, row active and precharge, bank A is selected.

If both BA0 is "Low" and BA1 is "High" at read, write, row active and precharge, bank B is selected.

If both BA0 is "High" and BA1 is "Low" at read, write, row active and precharge, bank C is selected.

If both BA0 and BA1 are "High" at read, write, row active and precharge, bank D is selected.

If A10/AP is "High" at row precharge, BA0 and BA1 is ignored and all banks are selected.