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NM27C64 Datasheet(PDF) 9 Page - Fairchild Semiconductor |
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NM27C64 Datasheet(HTML) 9 Page - Fairchild Semiconductor |
9 / 10 page 9 www.fairchildsemi.com NMC27C64 Rev. C Functional Description (Continued) Program Inhibit Programming multiple NMC27C64s in parallel with different data is also easily accomplished. Except for CE all like inputs (including OE and PGM) of the parallel NMC27C64 may be common. A TTL low level program pulse applied to an NMC27C64 ’s PGM input with CE at V IL and VPP at 13.0V will program that NMC27C64. A TTL high level CE input inhibits the other NMC27C64s from being programmed. Program Verify A verify should be performed on the programmed bits to determine whether they were correctly programmed. The verify may be performed with V PP at 13.0V. VPP must be at VCC, except during programming and program verify. MANUFACTURER ’S IDENTIFICATION CODE The NMC27C64 has a manufacturer ’s identification code to aid in programming. The code, shown in Table 2, is two bytes wide and is stored in a ROM configuration on the chip. It identifies the manufacturer and the device type. The code for the NMC27C64 is “8FC2”, where “8F” designates that it is made by Fairchild Semiconductor, and “C2” designates a 64k part. The code is accessed by applying 12V 0.5V to address pin A9. Addresses A1 –A8, A10–A12, CE, and OE are held at V IL. Address A0 is held at V IL for the manufacturer’s code, and at VIH for the device code. The code is read out on the 8 data pins. Proper code access is only guaranteed at 25 C 5 C. The primary purpose of the manufacturer ’s identification code is automatic programming control. When the device is inserted in a EPROM programmer socket, the programmer reads the code and then automatically calls up the specific programming algorithm for the part. This automatic programming control is only possible with programmers which have the capability of reading the code. ERASURE CHARACTERISTICS The erasure characteristics of the NMC27C64 are such that erasure begins to occur when exposed to light with wavelengths shorter than approximately 4000 Angstroms ( Å). It should be noted that sunlight and certain types of fluorescent lamps have wavelengths in the 3000 Å – 4000Å range. After programming, opaque labels should be placed over the NMC27C64 ’s window to prevent unintentional erasure. Covering the window will also prevent temporary functional failure due to the generation of photo currents. The recommended erasure procedure for the NMC27C64 is exposure to short wave ultraviolet light which has a wavelength of 2537 Angstroms ( Å). The integrated dose (i.e., UV intensity x exposure time) for erasure should be a minimum of 15W-sec/cm2. The NMC27C64 should be placed within 1 inch of the lamp tubes during erasure. Some lamps have a filter on their tubes which should be removed before erasure. An erasure system should be calibrated periodically. The distance from lamp to unit should be maintained at one inch. The erasure time increases as the square of the distance. (If distance is doubled the erasure time increases by a factor of 4.) Lamps lose intensity as they age. When a lamp is changed, the distance has changed or the lamp has aged, the system should be checked to make certain full erasure is occurring. Incomplete erasure will cause symptoms that can be misleading. Programmers, compo- nents, and even system designs have been erroneously sus- pected when incomplete erasure was the problem. SYSTEM CONSIDERATION The power switching characteristics of EPROMs require careful decoupling of the devices. The supply current, I CC, has three segments that are of interest to the system designer —the standby current level, the active current level, and the transient current peaks that are produced by voltage transitions on input pins. The magnitude of these transient current peaks is dependent on the output capacitance loading of the device. The associated V CC transient voltage peaks can be suppressed by properly selected decoupling capacitors. It is recommended that at least a 0.1 F ceramic capacitor be used on every device between V CC and GND. This should be a high frequency capacitor of low inherent inductance. In addition, at least a 4.7 F bulk electrolytic capacitor should be used between V CC and GND for each eight devices. The bulk capacitor should be located near where the power supply is connected to the array. The purpose of the bulk capacitor is to overcome the voltage drop caused by the inductive effects of the PC board traces. TABLE 2. Manufacturer ’s Identification Code Pins A0 O7 O6 O5 O4 O3 O2 O1 O0 Hex (10) (19) (18) (17) (16) (15) (13) (12) (11) Data Manufacturer Code V IL 1000111 1 8F Device CodeVIH 1100001 0 C2 |
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