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HM5117400BLS-6 Datasheet(PDF) 1 Page - Hitachi Semiconductor |
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HM5117400BLS-6 Datasheet(HTML) 1 Page - Hitachi Semiconductor |
1 / 25 page This specification is fully compatible with the 16-Mbit DRAM specifications from TEXAS INSTRUMENTS. HM5117400B Series 4,194,304-word 4-bit Dynamic Random Access Memory ADE-203-369A (Z) Rev. 1.0 Nov. 15, 1995 Description The Hitachi HM5117400B is a CMOS dynamic RAM organized 4,194,304 word 4 bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117400B offers Fast Page Mode as a high speed access mode. Features Single 5 V ( 10%) High speed Access time : 60 ns/ 70 ns/ 80 ns (max) Low power dissipation Active mode : 605 mW/550 mW/495 mW(max) Standby mode : 11 mW (max) : 0.83 mW (max) (L-version) Fast page mode capability Long refresh period 2048 refresh cycles : 32 ms : 128 ms (L-version) 3 variations of refresh -only refresh -before- refresh Hidden refresh Battery backup operation (L-version) Test function 16-bit parallel test mode |
Similar Part No. - HM5117400BLS-6 |
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Similar Description - HM5117400BLS-6 |
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