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APTGT225DA170 APT website – http://www.advancedpower.com 2 - 5 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 1700V 500 µA Tj = 25°C 2.0 2.4 VCE(sat) Collector Emitter Saturation Voltage VGE = 15V IC = 225A Tj = 125°C 2.4 V VGE(th) Gate Threshold Voltage VGE = VCE, IC = 4mA 5.0 5.8 6.5 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 600 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 20 Coes Output Capacitance 0.8 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 0.66 nF Td(on) Turn-on Delay Time 370 Tr Rise Time 40 Td(off) Turn-off Delay Time 650 Tf Fall Time Inductive Switching (25°C) VGE = 15V VBus = 900V IC = 225A RG = 3.3Ω 180 ns Td(on) Turn-on Delay Time 400 Tr Rise Time 50 Td(off) Turn-off Delay Time 800 Tf Fall Time 300 ns Eon Turn-on Switching Energy 72 Eoff Turn-off Switching Energy Inductive Switching (125°C) VGE = 15V VBus = 900V IC = 225A RG = 3.3Ω 70.5 mJ Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1700 V Tj = 25°C 500 IRM Maximum Reverse Leakage Current VR=1700V Tj = 125°C 750 µA IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 80°C 225 A Tj = 25°C 1.8 2.2 VF Diode Forward Voltage IF = 225A Tj = 125°C 1.9 V Tj = 25°C 385 trr Reverse Recovery Time Tj = 125°C 490 ns Tj = 25°C 60 Qrr Reverse Recovery Charge IF = 225A VR = 900V di/dt =2400A/µs Tj = 125°C 96 µC |
