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APTGT100DDA60T3 Datasheet(PDF) 1 Page - Advanced Power Technology |
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APTGT100DDA60T3 Datasheet(HTML) 1 Page - Advanced Power Technology |
1 / 5 page APTGT100DDA60T3 APT website – http://www.advancedpower.com 1 - 5 Absolute maximum ratings * Specification of IGBT device but output current must be limited to 75A to not exceed a delta of temperature greater than 30°C for the connectors. These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. 23 22 13 Q1 CR1 30 8 Q2 7 14 CR2 16 R1 29 15 26 27 4 3 31 32 16 15 18 20 23 22 13 11 12 14 8 7 29 30 28 27 26 3 32 31 10 19 2 25 4 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Symbol Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 600 V TC= 25°C 150 * IC Continuous Collector Current TC= 80°C 100 * ICM Pulsed Collector Current TC= 25°C 200 A VGE Gate – Emitter Voltage ±20 V PD Maximum Power Dissipation TC= 25°C 340 W RBSOA Reverse Bias Safe Operating Area Tj = 150°C 200A @ 550V VCES = 600V IC = 100A* @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design • High level of integration • Internal thermistor for temperature monitoring Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • Each leg can be easily paralleled to achieve a single boost of twice the current capability. Dual Boost chopper Trench + Field Stop IGBT® Power Module |
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