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APTGT100DA170T APT website – http://www.advancedpower.com 2 - 5 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 1700V 350 µA Tj = 25°C 2.0 2.4 VCE(sat) Collector Emitter Saturation Voltage VGE = 15V IC = 100A Tj = 125°C 2.4 V VGE(th) Gate Threshold Voltage VGE = VCE, IC = 2mA 5.0 5.8 6.5 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 500 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 9 Coes Output Capacitance 0.36 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 0.3 nF Td(on) Turn-on Delay Time 370 Tr Rise Time 40 Td(off) Turn-off Delay Time 650 Tf Fall Time Inductive Switching (25°C) VGE = 15V VBus = 900V IC = 100A RG = 4.7 Ω 180 ns Td(on) Turn-on Delay Time 400 Tr Rise Time 50 Td(off) Turn-off Delay Time 800 Tf Fall Time 300 ns Eon Turn-on Switching Energy 32 Eoff Turn-off Switching Energy Inductive Switching (125°C) VGE = 15V VBus = 900V IC = 100A RG = 4.7 Ω 31 mJ Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1700 V Tj = 25°C 350 IRM Maximum Reverse Leakage Current VR=1700V Tj = 125°C 600 µA IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 80°C 100 A Tj = 25°C 1.8 2.2 VF Diode Forward Voltage IF = 100A Tj = 125°C 1.9 V Tj = 25°C 385 trr Reverse Recovery Time Tj = 125°C 490 ns Tj = 25°C 28 Qrr Reverse Recovery Charge IF = 100A VR = 900V di/dt =1600A/µs Tj = 125°C 46 µC |
