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APTGT50DDA60T3 APT website – http://www.advancedpower.com 2 - 5 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 600V 250 µA Tj = 25°C 1.5 1.9 VCE(sat) Collector Emitter Saturation Voltage VGE =15V IC = 50A Tj = 150°C 1.7 V VGE(th) Gate Threshold Voltage VGE = VCE, IC = 600µA 5.0 5.8 6.5 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 600 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 3150 Coes Output Capacitance 200 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 95 pF Td(on) Turn-on Delay Time 110 Tr Rise Time 45 Td(off) Turn-off Delay Time 200 Tf Fall Time Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 50A RG = 10Ω 40 ns Td(on) Turn-on Delay Time 120 Tr Rise Time 50 Td(off) Turn-off Delay Time 250 Tf Fall Time 60 ns Eon Turn-on Switching Energy 0.87 Eoff Turn-off Switching Energy Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 50A RG = 10Ω 1.75 mJ Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 600 V Tj = 25°C 250 IRM Maximum Reverse Leakage Current VR=600V Tj = 150°C 500 µA IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 80°C 50 A Tj = 25°C 1.6 2 VF Diode Forward Voltage IF = 50A VGE = 0V Tj = 150°C 1.5 V Tj = 25°C 125 trr Reverse Recovery Time Tj = 150°C 220 ns Tj = 25°C 2.6 Qrr Reverse Recovery Charge IF = 50A VR = 300V di/dt =1800A/µs Tj = 150°C 5.4 µC |
