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APTGT50DDA60T3 Datasheet(PDF) 2 Page - Advanced Power Technology

Part No. APTGT50DDA60T3
Description  Dual Boost chopper Trench Field Stop IGBT Power Module
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Maker  ADPOW [Advanced Power Technology]
Homepage  http://www.advpowertech.com
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 2 page
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APTGT50DDA60T3
APT website – http://www.advancedpower.com
2 - 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 600V
250
µA
Tj = 25°C
1.5
1.9
VCE(sat)
Collector Emitter Saturation Voltage
VGE =15V
IC = 50A
Tj = 150°C
1.7
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 600µA
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
600
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
3150
Coes
Output Capacitance
200
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
95
pF
Td(on)
Turn-on Delay Time
110
Tr
Rise Time
45
Td(off)
Turn-off Delay Time
200
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 50A
RG = 10Ω
40
ns
Td(on)
Turn-on Delay Time
120
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
250
Tf
Fall Time
60
ns
Eon
Turn-on Switching Energy
0.87
Eoff
Turn-off Switching Energy
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 50A
RG = 10Ω
1.75
mJ
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 150°C
500
µA
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 80°C
50
A
Tj = 25°C
1.6
2
VF
Diode Forward Voltage
IF = 50A
VGE = 0V
Tj = 150°C
1.5
V
Tj = 25°C
125
trr
Reverse Recovery Time
Tj = 150°C
220
ns
Tj = 25°C
2.6
Qrr
Reverse Recovery Charge
IF = 50A
VR = 300V
di/dt =1800A/µs
Tj = 150°C
5.4
µC



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