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APTM50DHM65T Datasheet(PDF) 2 Page - Advanced Power Technology |
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APTM50DHM65T Datasheet(HTML) 2 Page - Advanced Power Technology |
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2 / 6 page  APTM50DHM65T APT website – http://www.advancedpower.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit BVDSS Drain - Source Breakdown Voltage VGS = 0V, ID = 250µA 500 V VGS = 0V,VDS= 500V Tj = 25°C 100 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS= 400V Tj = 125°C 500 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 25.5A 65 m W VGS(th) Gate Threshold Voltage VGS = VDS, ID = 2.5mA 3 5 V IGSS Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±100 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 7000 Coss Output Capacitance 1400 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 90 pF Qg Total gate Charge 140 Qgs Gate – Source Charge 40 Qgd Gate – Drain Charge VGS = 10V VBus = 250V ID = 51A 70 nC Td(on) Turn-on Delay Time 21 Tr Rise Time 38 Td(off) Turn-off Delay Time 75 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 51A RG = 3 W 93 ns Eon Turn-on Switching Energy u 1035 Eoff Turn-off Switching Energy v Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 51A, RG = 3Ω 845 µJ Eon Turn-on Switching Energy u 1556 Eoff Turn-off Switching Energy v Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 51A, RG = 3Ω 1013 µJ Diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 70°C 60 A IF = 60A 1.6 1.8 IF = 120A 1.9 VF Diode Forward Voltage IF = 60A Tj = 125°C 1.4 V Tj = 25°C 130 trr Reverse Recovery Time IF = 60A VR = 400V di/dt = 200A/µs Tj = 125°C 170 ns Tj = 25°C 220 Qrr Reverse Recovery Charge IF = 60A VR = 400V di/dt = 200A/µs Tj = 125°C 920 nC u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. |
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