APTM50AM17F

APT website – http://www.advancedpower.com

2 – 6

Electrical Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Drain - Source Breakdown Voltage

500

V

1000

Zero Gate Voltage Drain Current

2000

µA

Drain – Source on Resistance

17

m

W

Gate Threshold Voltage

3

5

V

Gate – Source Leakage Current

±200

nA

Dynamic Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Input Capacitance

28

Output Capacitance

5.6

Reverse Transfer Capacitance

f = 1MHz

0.36

nF

Total gate Charge

560

Gate – Source Charge

160

Gate – Drain Charge

280

nC

Turn-on Delay Time

21

Rise Time

38

Turn-off Delay Time

75

Fall Time

Inductive switching @ 125°C

W

93

ns

Turn-on Switching Energy

u

4140

Turn-off Switching Energy

v

Inductive switching @ 25°C

3380

µJ

Turn-on Switching Energy

u

6224

Turn-off Switching Energy

v

Inductive switching @ 125°C

4052

µJ

Source - Drain diode ratings and characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Tc = 25°C

180

Continuous Source current

(Body diode)

Tc = 80°C

135

A

Diode Forward Voltage

1.3

V

dv/dt

Peak Diode Recovery

w

15

V/ns

270

Reverse Recovery Time

540

ns

10.4

Reverse Recovery Charge

38.4

µC

v In accordance with JEDEC standard JESD24-1.

w dv/dt numbers reflect the limitations of the circuit rather than the device itself.

£ - 180A

di/dt

£ 700A/µs

£ 150°C