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APTM50AM17F Datasheet(PDF) 2 Page - Advanced Power Technology |
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APTM50AM17F Datasheet(HTML) 2 Page - Advanced Power Technology |
2 / 6 page APTM50AM17F APT website – http://www.advancedpower.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit BVDSS Drain - Source Breakdown Voltage VGS = 0V, ID = 500µA 500 V VGS = 0V,VDS = 500V Tj = 25°C 1000 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 400V Tj = 125°C 2000 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 90A 17 m W VGS(th) Gate Threshold Voltage VGS = VDS, ID = 10mA 3 5 V IGSS Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±200 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 28 Coss Output Capacitance 5.6 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.36 nF Qg Total gate Charge 560 Qgs Gate – Source Charge 160 Qgd Gate – Drain Charge VGS = 10V VBus = 250V ID = 180A 280 nC Td(on) Turn-on Delay Time 21 Tr Rise Time 38 Td(off) Turn-off Delay Time 75 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 180A RG = 0.5 W 93 ns Eon Turn-on Switching Energy u 4140 Eoff Turn-off Switching Energy v Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 180A, RG = 0.5Ω 3380 µJ Eon Turn-on Switching Energy u 6224 Eoff Turn-off Switching Energy v Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 180A, RG = 0.5Ω 4052 µJ Source - Drain diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tc = 25°C 180 IS Continuous Source current (Body diode) Tc = 80°C 135 A VSD Diode Forward Voltage VGS = 0V, IS = - 180A 1.3 V dv/dt Peak Diode Recovery w 15 V/ns Tj = 25°C 270 trr Reverse Recovery Time IS = -180A VR = 250V diS/dt = 400A/µs Tj = 125°C 540 ns Tj = 25°C 10.4 Qrr Reverse Recovery Charge IS = -180A VR = 250V diS/dt = 400A/µs Tj = 125°C 38.4 µC u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. w dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS £ - 180A di/dt £ 700A/µs VR £ VDSS Tj £ 150°C |
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