APT75GP120B2

DYNAMIC CHARACTERISTICS

Symbol

RBSOA

Test Conditions

Capacitance

f = 1 MHz

Gate Charge

Inductive Switching (25°C)

Inductive Switching (125°C)

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-to-Emitter Plateau Voltage

Gate-Emitter Charge

Gate-Collector ("Miller ") Charge

Reverse Bias Safe Operating Area

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

MIN

TYP

MAX

7035

460

80

7.5

320

50

140

300

20

40

163

56

1620

4100

2500

20

40

244

115

1620

5850

4820

UNIT

pF

V

nC

A

ns

ns

UNIT

°C/W

gm

MIN

TYP

MAX

.12

N/A

5.90

Characteristic

Junction to Case (IGBT)

Junction to Case (DIODE)

Package Weight

Symbol

THERMAL AND MECHANICAL CHARACTERISTICS

1 Repetitive Rating: Pulse width limited by maximum junction temperature.

2 For Combi devices, I

ces

includes both IGBT and FRED leakages

3 See MIL-STD-750 Method 3471.

4E

on1

is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current

adding to the IGBT turn-on loss. (See Figure 24.)

5E

on2

is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching

loss. A Combi device is used for the clamping diode as shown in the E

on2

test circuit. (See Figures 21, 22.)

6E

off

is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)

7 Continuous current limited by package lead temperature.

APT Reserves the right to change, without notice, the specifications and information contained herein.