Note:

Duty Factor D =

t1/t

2

Peak TJ = PDM x ZθJC + TC

t1

t2

SINGLE PULSE

1.0

RECTANGULARPULSEDURATION(SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.20

0.16

0.12

0.8

0.04

0

0.5

0.1

0.3

0.7

0.9

0.05

DYNAMIC CHARACTERISTICS

APT55M85 B2FLL - LFLL

1 Repetitive Rating: Pulse width limited by maximum junction

temperature

2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

3 See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Reverse Recovery Time

Reverse Recovery Charge

Peak Recovery Current

Symbol

dt

UNIT

Amps

Volts

V/ns

ns

µC

Amps

Symbol

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-Source Charge

Gate-Drain ("Miller ") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Test Conditions

f = 1 MHz

MIN

TYP

MAX

6590

1296

91

157

38

86

19

14

41

6

UNIT

pF

nC

ns

MIN

TYP

MAX

59

236

1.3

15

270

540

1.8

6.2

16

29

THERMAL CHARACTERISTICS

Symbol

MIN

TYP

MAX

0.18

40

UNIT

°C/W

Characteristic

Junction to Case

Junction to Ambient

D

V

DSS

T

150