Electronic Components Datasheet Search |
|
APT47N60SCF Datasheet(PDF) 2 Page - Advanced Power Technology |
|
APT47N60SCF Datasheet(HTML) 2 Page - Advanced Power Technology |
2 / 5 page DYNAMIC CHARACTERISTICS APT47N60BCF_SCF(G) SINGLE PULSE 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0.5 0.1 0.3 0.7 D = 0.9 0.05 FINAL DATA SHEET WITH MOS 7 FORMAT Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2 t2 t1 Note: SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS THERMAL CHARACTERISTICS Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 4 (V GS = 0V, IS = -46A) Peak Diode Recovery dv/ dt 7 Reverse Recovery Time (I S = -46A, di/ dt = 100A/µs) Reverse Recovery Charge (I S = -46A, di/ dt = 100A/µs) Peak Recovery Current (I S = -46A, di/ dt = 100A/µs) Symbol I S I SM V SD dv/ dt t rr Q rr I RRM UNIT Amps Volts V/ns ns µC Amps MIN TYP MAX 46 115 1.2 40 210 350 2.0 5.4 18 28 Symbol RθJC RθJA MIN TYP MAX 0.30 62 UNIT °C/W Characteristic Junction to Case Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Repetitive avalanche causes additional power losses that can be calculated as PAV = EAR*f 3 Starting T j = +25°C, L = 36.0mH, RG = 25Ω, Peak IL = 10A APT Reserves the right to change, without notice, the specifications and information contained herein. T j = 25°C T j = 125°C T j = 25°C T j = 125°C T j = 25°C T j = 125°C Symbol C iss C oss C rss Q g Q gs Q gd t d(on) t r t d(off) t f E on E off E on E off Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 5 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy 6 Turn-off Switching Energy Turn-on Switching Energy 6 Turn-off Switching Energy Test Conditions V GS = 0V V DS = 25V f = 1 MHz V GS = 10V V DD = 300V I D = 46A @ 25°C RESISTIVE SWITCHING V GS = 15V V DD = 380V I D = 46A @ 25°C R G = 3.6Ω INDUCTIVE SWITCHING @ 25°C V DD = 400V, VGS = 15V I D = 46A, RG = 4.3Ω INDUCTIVE SWITCHING @ 125°C V DD = 400V, VGS = 15V I D = 46A, RG = 4.3Ω 4 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 5 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. 7 Maximum 125°C diode commutation speed = di/dt 600A/µs MIN TYP MAX 7290 1735 41 255 43 135 30 30 100 15 885 590 1270 725 UNIT pF nC ns µJ |
Similar Part No. - APT47N60SCF |
|
Similar Description - APT47N60SCF |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |