DYNAMIC CHARACTERISTICS

APT40M70B2_LVFR(G)

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

THERMALCHARACTERISTICS

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Reverse Recovery Time

Reverse Recovery Charge

Peak Recovery Current

Symbol

UNIT

Amps

Volts

V/ns

ns

µC

Amps

MIN

TYP

MAX

57

228

1.3

15

250

500

1.6

5.5

15

27

Symbol

MIN

TYP

MAX

0.24

40

UNIT

°C/W

Characteristic

Junction to Case

Junction to Ambient

1 Repetitive Rating: Pulse width limited by maximum junction

temperature

2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

3 See MIL-STD-750 Method 3471

T

APT Reserves the right to change, without notice, the specifications and information contained herein.

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Test Conditions

V

V

f = 1 MHz

V

V

I

V

V

I

R

MIN

TYP

MAX

7410

8890

1140

1600

450

675

330

495

40

40

125

190

16

32

16

32

55

80

510

UNIT

pF

nC

ns

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

1.0

10

RECTANGULARPULSEDURATION(SECONDS)

FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION

0.3

0.1

0.05

0.01

0.005

0.001

Note:

Duty Factor D = t1/t2

Peak TJ = PDM x ZθJC + TC

t1

t2

0.1

SINGLE PULSE

0.02

0.05

0.2

D=0.5

0.01