Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

Zero Gate Voltage Drain Current (V

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Gate Threshold Voltage (V

MAXIMUM RATINGS

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

T

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

UNIT

Volts

Amps

Ohms

µA

nA

Volts

MIN

TYP

MAX

300

76

0.040

250

1000

±100

24

APT30M40B2VFR_LVFR

300

76

304

±30

±40

520

4.16

-55 to 150

300

76

50

2500

mode power MOSFETs. This new technology minimizes the JFET effect,

also achieves faster switching speeds through optimized gate layout.

• Fast Recovery Body Diode

• Avalanche Energy Rated

• Lower Leakage

• Faster Switching

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

T-MAX™

TO-264

B2VFR

LVFR

APT30M40B2VFR

APT30M40LVFR

300V 76A

0.040

Ω

Ω

Ω

Ω

Ω

G

D

S