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APT30M40LVFR Datasheet(PDF) 1 Page - Advanced Power Technology |
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APT30M40LVFR Datasheet(HTML) 1 Page - Advanced Power Technology |
1 / 4 page Characteristic / Test Conditions Drain-Source Breakdown Voltage (V GS = 0V, ID = 250µA) On State Drain Current 2 (V DS > ID(on) x RDS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (V GS = 10V, 0.5 ID[Cont.]) Zero Gate Voltage Drain Current (V DS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (V DS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (V GS = ±30V, VDS = 0V) Gate Threshold Voltage (V DS = VGS, ID = 2.5mA) MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol V DSS I D I DM V GS V GSM P D T J,TSTG T L I AR E AR E AS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 UNIT Volts Amps Volts Watts W/°C °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol BV DSS I D(on) R DS(on) I DSS I GSS V GS(th) UNIT Volts Amps Ohms µA nA Volts MIN TYP MAX 300 76 0.040 250 1000 ±100 24 APT30M40B2VFR_LVFR 300 76 304 ±30 ±40 520 4.16 -55 to 150 300 76 50 2500 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • Avalanche Energy Rated • Lower Leakage • T-MAX™ or TO-264 Package • Faster Switching CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com POWER MOS V® FREDFET T-MAX™ TO-264 B2VFR LVFR APT30M40B2VFR APT30M40LVFR 300V 76A 0.040 Ω Ω Ω Ω Ω G D S |
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