APT20GF120B_SRDQ1(G)

1 Repetitive Rating: Pulse width limited by maximum junction temperature.

2 For Combi devices, I

3 See MIL-STD-750 Method 3471.

4 E

adding to the IGBT turn-on loss. (See Figure 24.)

5 E

loss. (See Figures 21, 22.)

6 E

APT Reserves the right to change, without notice, the specifications and information contained herein.

THERMAL AND MECHANICAL CHARACTERISTICS

UNIT

°C/W

gm

MIN

TYP

MAX

.63

1.18

5.9

Characteristic

Junction to Case

(IGBT)

Junction to Case

(DIODE)

Package Weight

Symbol

W

T

DYNAMIC CHARACTERISTICS

Symbol

C

ies

C

oes

C

res

V

GEP

Q

g

Q

ge

Q

gc

SSOA

t

d(on)

t

r

t

d(off)

t

f

E

on1

E

on2

E

off

t

d(on)

t

r

t

d(off)

t

f

E

on1

E

on2

E

off

Test Conditions

Capacitance

V

f = 1 MHz

Gate Charge

V

V

I

T

15V, L = 100µH,V

Inductive Switching (25°C)

V

V

I

R

T

Inductive Switching (125°C)

V

V

I

R

T

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-to-Emitter Plateau Voltage

Gate-Emitter Charge

Gate-Collector ("Miller") Charge

Switching Safe Operating Area

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

MIN

TYP

MAX

1090

125

65

10.5

100

12

65

64

10

9

120

95

895

850

840

10

9

145

110

865

1480

1058

UNIT

pF

V

nC

A

ns

ns