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APT15GP60S Datasheet(PDF) 1 Page - Microsemi Corporation |
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APT15GP60S Datasheet(HTML) 1 Page - Microsemi Corporation |
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1 / 6 page  The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • 100 kHz operation @ 400V, 19A • Low Gate Charge • 200 kHz operation @ 400V, 12A • Ultrafast Tail Current shutoff • SSOA rated MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. STATIC ELECTRICAL CHARACTERISTICS MIN TYP MAX 600 3 4.5 6 2.2 2.7 2.1 250 2500 ±100 Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 250µA) Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±20V) Symbol BVCES VGE(TH) VCE(ON) ICES IGES UNIT Volts µA nA Symbol VCES VGE VGEM IC1 IC2 ICM SSOA PD TJ,TSTG TL APT15GP60B_S 600 ±20 ±30 56 27 65 65A @ 600V 250 -55 to 150 300 UNIT Volts Amps Watts °C Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 @ TC = 25°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. G C E POWER MOS 7® IGBT APT15GP60B APT15GP60S 600V Microsemi Website - http://www.microsemi.com |
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