APT13GP120BDQ1(G)

TYPICAL PERFORMANCE CURVES

MAXIMUM RATINGS

All Ratings: T

STATIC ELECTRICAL CHARACTERISTICS

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (V

Gate Threshold Voltage (V

Collector-Emitter On Voltage (V

Collector-Emitter On Voltage (V

Collector Cut-off Current (V

2

Collector Cut-off Current (V

2

Gate-Emitter Leakage Current (V

Symbol

V

(BR)CES

V

GE(TH)

V

CE(ON)

I

CES

I

GES

Units

Volts

µA

nA

Symbol

V

CES

V

GE

I

C1

I

C2

I

CM

RBSOA

P

D

T

T

L

APT13GP120BDQ1(G)

1200

±20

41

20

50

50A @ 960V

250

-55 to 150

300

UNIT

Volts

Amps

Watts

°C

Parameter

Collector-Emitter Voltage

Gate-Emitter Voltage

Continuous Collector Current @ T

Continuous Collector Current @ T

Reverse Bias Safe Operating Area @ T

Total Power Dissipation

Operating and Storage Junction Temperature Range

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

APT Website - http://www.advancedpower.com

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

MIN

TYP

MAX

1200

3

4.5

6

3.3

3.9

3.0

500

3000

±100

Through Technology this IGBT is ideal for many high frequency, high voltage switching

applications and has been optimized for high frequency switchmode power supplies.

• Low Conduction Loss

• 100 kHz operation @ 600V, 10A

• Low Gate Charge

• 50 kHz operation @ 600V, 16A

• Ultrafast Tail Current shutoff

• RBSOA Rated

1200V

APT13GP120BDQ1

APT13GP120BDQ1G*

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

®

TO-2

47

G

C

E

C

E

G