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1517-110M

110 Watts, 40 Volts, 200

µs, 10%

Radar 1480 to 1650 MHz

GENERAL DESCRIPTION

The 1517-110M is an internally matched, COMMON BASE transistor capable

of providing 110 Watts of pulsed RF output power at 200 microseconds pulse

width, 10% duty factor across the band 1480 to 1650 MHz. This hermetically

solder-sealed transistor is specifically designed for upper L-Band radar

applications. It utilizes gold metallization and diffused emitter ballasting to

provide high reliability and supreme ruggedness.

CASE OUTLINE

55AW-1

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation

Device Dissipation @25

350 W

Maximum Voltage and Current

70 V

3 V

9 A

Maximum Temperatures

Storage Temperature

-65 to +200

°C

Operating Junction Temperature

+200

°C

FUNCTIONAL CHARACTERISTICS @ 25

°C

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Power Output

110

120

150

W

Power Gain

7.3

8.6

dB

η

c

Collector Efficiency

40

%

Input Return Loss

9

dB

Pd

Pulse Droop

F = 1480-1650 MHz

Vcc = 40 Volts

Pin = 20.5 W

Pulse Width = 200

µs

Duty Factor = 10%

0.5

dB

VSWR

1

Load Mismatch Tolerance

F=1480 MHz, Pin = 20.5 W

3:1

ELECTRICAL CHARACTERISTICS @ 25

°C

Emitter cutoff current

10

mA

Collector to Emitter Breakdown

70

V

DC – Current Gain

20

Thermal Resistance

0.5

°C/W

NOTES: 1. Pulse condition of 200

µsec, 10%