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1517-110M Datasheet(PDF) 1 Page - Advanced Power Technology |
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1517-110M Datasheet(HTML) 1 Page - Advanced Power Technology |
1 / 4 page ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW. ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECT. Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 1517-110M 110 Watts, 40 Volts, 200 µs, 10% Radar 1480 to 1650 MHz GENERAL DESCRIPTION The 1517-110M is an internally matched, COMMON BASE transistor capable of providing 110 Watts of pulsed RF output power at 200 microseconds pulse width, 10% duty factor across the band 1480 to 1650 MHz. This hermetically solder-sealed transistor is specifically designed for upper L-Band radar applications. It utilizes gold metallization and diffused emitter ballasting to provide high reliability and supreme ruggedness. CASE OUTLINE 55AW-1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @25 °C1 350 W Maximum Voltage and Current Collector to Base Voltage (BVCES) 70 V Emitter to Base Voltage (BVEBO) 3 V Collector Current (IC) 9 A Maximum Temperatures Storage Temperature -65 to +200 °C Operating Junction Temperature +200 °C FUNCTIONAL CHARACTERISTICS @ 25 °C SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout Power Output 110 120 150 W Pg Power Gain 7.3 8.6 dB η c Collector Efficiency 40 % IRL Input Return Loss 9 dB Pd Pulse Droop F = 1480-1650 MHz Vcc = 40 Volts Pin = 20.5 W Pulse Width = 200 µs Duty Factor = 10% 0.5 dB VSWR 1 Load Mismatch Tolerance F=1480 MHz, Pin = 20.5 W 3:1 ELECTRICAL CHARACTERISTICS @ 25 °C IEBO Emitter cutoff current VEB = 3 V 10 mA BVCES Collector to Emitter Breakdown IC = 40 mA 70 V hFE DC – Current Gain VCE = 5V, Ic = 1A 20 θjc1 Thermal Resistance 0.5 °C/W NOTES: 1. Pulse condition of 200 µsec, 10% |
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