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221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 227, REV. B
HERMETIC POWER MOSFET
N-CHANNEL
(Standard and Fast-FET)
DESCRIPTION: A 500 VOLT, 24 AMP, 0.23 RDS(ON) MOSFET IN A HERMETIC TO-254 PACKAGE.
SHD225605: Formerly SHD2253, N-Channel Enhancement Mode.
SHD225606: Formerly SHD2253F, N-Channel Enhancement Mode with Fast Intrinsic Diode.
MAX. RATINGS / ELECTRICAL CHARACTERISTICS
(AT Tj=25
0C UNLESS OTHERWISE SPECIFIED).
P
PA
AR
RA
AM
ME
ET
TE
ER
R
S
SY
YM
MB
BO
OL
L
M
MIIN
N
T
TY
YP
P
M
MA
AX
X
U
UN
NIIT
TS
S
DRAIN TO SOURCE BREAKDOWN VOLTAGE
(VGS = 0 V, ID = 1.0 mA)
BVDSS
500
-
-
Volts
DRAIN TO SOURCE ON STATE RESISTANCE
(VGS = 10 V, ID = 12.0 A)
RDS(ON)
-
-
0.23
W
CONTINUOUS DRAIN CURRENT
(VDS = 10 V, TC = 25
0C)
ID
-
-
24
Amps
GATE THRESHOLD VOLTAGE
(VDS = VGS, ID = 250
mA)
VGS(th)
2.0
-
4.0
Volts
FORWARD TRANSCONDUCTANCE
(VDS=10V,IDS = 12.0A)
gfs
11
21
-
S(1/
W)
ZERO GATE VOLTAGE DRAIN CURRENT
(VDS = 400V)
(VGS = OV, TJ=125
0C)
IDSS
-
-
-
-
200
1.0
mA
mA
GATE TO SOURCE LEAKAGE
(VGS =
20VDC, VDS = 0)
IGSS
-
-
+/-
100
nA
TOTAL GATE CHARGE
SHD225605
(VGS = 10V, VDS = 250V, ID = 12.0A)
SHD225606
Qg
-
-
190
160
nC
INPUT CAPACITANCE
OUTPUT CAPACITANCE
REVERSE TRANSFER CAPACITANCE
(VGS = 0V, VDS = 25V, f = 1.0 Mhz)
Ciss
Coss
Crss
-
-
-
4200
450
135
-
-
-
pF
SHD225605
SHD225606
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