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AP9922EO Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP9922EO Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
1 / 4 page Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low on-resistance BVDSS 20V ▼ Capable of 2.5V gate drive RDS(ON) 15mΩ ▼ Optimal DC/DC battery application ID 6.8A Description Absolute Maximum Ratings Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient 3 Max. 125 ℃ /W Data and specifications subject to change without notice 200615052 AP9922EO Parameter Rating Drain-Source Voltage 20 Gate-Source Voltage ±12 Drain Current 3, V GS @ 4.5V 6.8 Drain Current 3, V GS @ 4.5V 5.4 Pulsed Drain Current 1 25 Total Power Dissipation 1 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.008 Thermal Data Parameter Storage Temperature Range S1 G1 D1 S2 G2 D2 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D2 S2 S2 G2 D1 S1 S1 G1 TSSOP-8 |
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