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AP9915GK Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP9915GK Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
1 / 4 page Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 20V ▼ Lower Gate Charge RDS(ON) 50mΩ ▼ Fast Switching Characteristic ID 6.2A ▼ RoHS Compliant Description Absolute Maximum Ratings Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient 3 Max. 40 ℃ /W Data and specifications subject to change without notice Pb Free Plating Product 200615051-1/4 AP9915GK Parameter Rating Drain-Source Voltage 20 Gate-Source Voltage ±12 Continuous Drain Current 3 6.2 Continuous Drain Current 3 5 Pulsed Drain Current 1 30 Total Power Dissipation 3.2 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.025 Thermal Data Parameter Storage Temperature Range The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G D S D D S G SOT-223 |
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