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AP2851GO Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP2851GO Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
1 / 7 page Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ ▼ ▼ ▼ Simple Drive Requirement N-CH BVDSS 30V ▼ ▼ ▼ ▼ Low On-resistance RDS(ON) 40mΩ ▼ ▼ ▼ ▼ Fast Switching Performance ID 5A P-CH BVDSS -30V RDS(ON) 80mΩ Description ID -3.3A Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage ±20 ±20 V ID@TA=25℃ Continuous Drain Current 3 5 -3.3 A ID@TA=70℃ Continuous Drain Current 3 3.9 -2.7 A IDM Pulsed Drain Current 1 20 -20 A PD@TA=25℃ Total Power Dissipation 1.38 W Linear Derating Factor 0.01 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient 3 Max. 90 ℃/W Data and specifications subject to change without notice Parameter 200817041 AP2851GO Thermal Data Pb Free Plating Product G2 D2 S2 G1 D1 S1 D2 S2 S2 G2 D1 S1 S1 G1 TSSOP-8 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. |
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