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AP1333GU Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP1333GU Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
1 / 4 page Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Simple Gate Drive BVDSS -20V ▼ ▼ ▼ ▼ Small Package Outline RDS(ON) 800mΩ ▼ ▼ ▼ ▼ Fast Switching Speed ID -550mA ▼ ▼ ▼ ▼ RoHS Compliant Description Absolute Maximum Ratings Symbol Unit VDS V VGS V ID@TA=25℃ mA ID@TA=70℃ mA IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient 3 Max. 360 ℃ /W Data and specifications subject to change without notice AP1333GU Parameter Rating Pb Free Plating Product Drain-Source Voltage -20 Gate-Source Voltage ±12 Continuous Drain Current 3 -550 Continuous Drain Current 3 -440 Pulsed Drain Current 1,2 2.5 Total Power Dissipation 0.35 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.003 Storage Temperature Range Thermal Data Parameter 200822051-1/4 D G S SOT-323 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G D S |
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