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AP15P10GH Datasheet(PDF) 3 Page - Advanced Power Electronics Corp. |
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AP15P10GH Datasheet(HTML) 3 Page - Advanced Power Electronics Corp. |
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3 / 4 page  AP15P10GH/J Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 3/4 0 10 20 30 0 5 10 15 20 25 -V DS , Drain-to-Source Voltage (V) T C =25 o C -10V -7.0V -5.0V -4.5V V G = - 3 .0V 0 10 20 30 0 5 10 15 20 25 -V DS , Drain-to-Source Voltage (V) T C = 150 o C -10V -7.0V -5.0V -4.5V V G = - 3 .0V 150 250 350 450 550 24 68 10 -V GS , Gate-to-Source Voltage (V) I D =-9 A T C =25 ℃ ℃ ℃ ℃ 0.4 0.9 1.4 1.9 2.4 -50 0 50 100 150 T j , Junction Temperature ( o C) I D =-9 A V G = - 10V 0.3 0.7 1.1 1.5 -50 0 50 100 150 T j , Junction Temperature ( o C) 0 2 4 6 8 10 0 0.4 0.8 1.2 -V SD , Source-to-Drain Voltage (V) T j =25 o C T j =150 o C |
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