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M366S3323DTS-C1H Datasheet(PDF) 4 Page - Samsung semiconductor

Part # M366S3323DTS-C1H
Description  32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

M366S3323DTS-C1H Datasheet(HTML) 4 Page - Samsung semiconductor

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M366S3323DTS
PC133/PC100 Unbuffered DIMM
Rev. 0.1 Sept. 2001
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VDD supply relative to Vss
VDD, VDDQ
-1.0 ~ 4.6
V
Storage temperature
TSTG
-55 ~ +150
°C
Power dissipation
PD
16
W
Short circuit current
IOS
50
mA
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Note :
DC OPERATING CONDITIONS AND CHARACTERISTICS
CAPACITANCE (VDD = 3.3V, TA = 23
°C, f = 1MHz, VREF = 1.4V ± 200 mV)
Pin
Symbol
Min
Max
Unit
Address (A0 ~ A11, BA0 ~ BA1)
RAS, CAS, WE
CKE (CKE0 ~ CKE1)
Clock (CLK0 ~ CLK3)
CS (CS0 ~ CS3)
DQM (DQM0 ~ DQM7)
DQ (DQ0 ~ DQ63)
CADD
CIN
CCKE
CCLK
CCS
CDQM
COUT
45
45
25
15
15
10
13
85
85
45
21
25
15
18
pF
pF
pF
pF
pF
pF
pF
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70
°C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
VDD, VDDQ
3.0
3.3
3.6
V
Input logic high voltage
VIH
2.0
3.0
VDDQ+0.3
V
1
Input logic low voltage
VIL
-0.3
0
0.8
V
2
Output logic high voltage
VOH
2.4
-
-
V
IOH = -2mA
Output logic low voltage
VOL
-
-
0.4
V
IOL = 2mA
Input leakage current
ILI
-10
-
10
uA
3
1. VIH (max) = 5.6V AC. The overshoot voltage duration is
≤ 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is
≤ 3ns.
3. Any input 0V
≤ VIN ≤ VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Notes :


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