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K4X51163PC-FGC3 Datasheet(PDF) 11 Page - Samsung semiconductor |
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K4X51163PC-FGC3 Datasheet(HTML) 11 Page - Samsung semiconductor |
11 / 23 page K4X51163PC - L(F)E/G February 2006 Mobile-DDR SDRAM DC CHARACTERISTICS Recommended operating conditions (Voltage referenced to VSS = 0V, Tc = -25 to 85 °C) Parameter Symbol Test Condition DDR266 DDR222 Unit Operating Current (One Bank Active) IDD0 tRC = tRCmin ; tCK = tCKmin ; CKE is HIGH; CS is HIGH between valid commands; address inputs are SWITCHING; data bus inputs are STABLE 80 70 mA Precharge Standby Current in power-down mode IDD2P all banks idle, CKE is LOW; CS is HIGH, tCK = t CKmin ; address and control inputs are SWITCHING; data bus inputs are STABLE 0.3 mA IDD2PS all banks idle, CKE is LOW; CS is HIGH, CK = LOW, CK = HIGH; address and control inputs are SWITCHING; data bus inputs are STABLE 0.3 Precharge Standby Current in non power-down mode IDD2N all banks idle, CKE is HIGH; CS is HIGH, tCK = t CKmin ;address and control inputs are SWITCHING; data bus inputs are STABLE 12 10 mA IDD2NS all banks idle, CKE is HIGH; CS is HIGH, CK = LOW, CK = HIGH; address and control inputs are SWITCHING; data bus inputs are STABLE 8 7 Active Standby Current in power-down mode IDD3P one bank active, CKE is LOW; CS is HIGH, tCK = tCKmin ;address and control inputs are SWITCHING; data bus inputs are STABLE 6 mA IDD3PS one bank active, CKE is LOW; CS is HIGH, CK = LOW, CK = HIGH;address and control inputs are SWITCHING; data bus inputs are STABLE 3 Active Standby Current in non power-down mode (One Bank Active) IDD3N one bank active, CKE is HIGH; CS is HIGH, tCK = tCKmin ;address and control inputs are SWITCHING; data bus inputs are STABLE 25 20 mA IDD3NS one bank active, CKE is HIGH; CS is HIGH, CK = LOW, CK = HIGH; address and control inputs are SWITCHING; data bus inputs are STABLE 20 15 Operating Current (Burst Mode) IDD4R one bank active; BL = 4; CL = 3; tCK = tCKmin ; continuous read bursts; I OUT = 0 mA address inputs are SWITCHING; 50% data change each burst transfer 115 95 mA IDD4W one bank active; BL = 4; tCK = tCKmin ; continuous write bursts;address inputs are SWITCHING; 50% data change each burst transfer 100 90 Refresh Current IDD5 tRC = tRFCmin ; tCK = tCKmin ; burst refresh; CKE is HIGH;address and control inputs are SWITCHING; data bus inputs are STABLE 150 135 mA Self Refresh Current IDD6 CKE is LOW; tCK = tCKmin ; Extended Mode Register set to all 0’s; address and control inputs are STABLE; data bus inputs are STABLE TCSR 45*1 85 °C -E Full Array 300 600 uA 1/2 Array 270 500 1/4 Array 255 450 -G Full Array 250 500 1/2 Array 220 400 1/4 Array 205 350 Deep Power Down Current IDD8*2 Address and control inputs are STABLE; data bus inputs are STABLE 10 uA Note : 1. It has +/- 5°C tolerance. 2. DPD(Deep Power Down) function is an optional feature, and it will be enabled upon request. Please contact Samsung for more information. 3. IDD specifications are tested after the device is properly intialized. 4. Input slew rate is 1V/ns. 5. Definitions for IDD: LOW is defined as V IN ≤ 0.1 * VDDQ ; HIGH is defined as V IN ≥ 0.9 * VDDQ ; STABLE is defined as inputs stable at a HIGH or LOW level ; SWITCHING is defined as: - address and command: inputs changing between HIGH and LOW once per two clock cycles ; - data bus inputs: DQ changing between HIGH and LOW once per clock cycle; DM and DQS are STABLE. |
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Similar Description - K4X51163PC-FGC3 |
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