K4X51163PC - L(F)E/G

February 2006

Mobile-DDR SDRAM

DC Operating Conditions

Absolute maximum ratings

Note :

Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.

Functional operation should be restricted to recommend operation condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

Parameter

Symbol

Value

Unit

-0.5 ~ 2.7

V

-0.5 ~ 2.7

V

-0.5 ~ 2.7

V

Storage temperature

-55 ~ +150

°C

Power dissipation

1.0

W

Short circuit current

50

mA

Recommended operating conditions(Voltage referenced to VSS=0V, Tc = -25

°C to 85°C)

Note :

1. Under all conditions, VDDQ must be less than or equal to VDD.

2. These parameters should be tested at the pin on actual components and may be checked at either the pin or the pad in simulation.

Parameter

Symbol

Min

Max

Unit

Note

Supply voltage(for device with a nominal VDD of 1.8V)

VDD

1.7

1.95

V

1

I/O Supply voltage

VDDQ

1.7

1.95

V

1

Input logic high voltage

VIH(DC)

0.7 x VDDQ

VDDQ+0.3

V

2

Input logic low voltage

VIL(DC)

-0.3

0.3 x VDDQ

V

2

Output logic high voltage

VOH(DC)

0.9 x VDDQ

-

V

IOH = -0.1mA

Output logic low voltage

VOL(DC)

-

0.1 x VDDQ

V

IOL = 0.1mA

Input leakage current

II

-2

2

uA

Output leakage current

IOZ

-5

5

uA