IXFE55N50 datasheet(1/2 Pages) IXYS

Part #	IXFE55N50

Description	HiPerFETTM Power MOSFET

Download	2 Pages

Scroll/Zoom	100%

Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

Logo

1 / 2 page

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

V

DSS

V

GS = 0 V, ID = 3mA

500

V

GS(th)

V

DS = VGS, ID = 8mA

2.5

4.5

V

I

GSS

V

GS = ±20V, VGS = 0V

±100 nA

I

DSS

V

DS = VDSS

T

J =

25

°C

400

µA

V

GS = 0 V

T

J = 125°C

2 mA

R

DS(on)

V

GS = 10V, ID = IT

55N50

80 m

Ω

Note 2

50N50

100 m

Ω

HiPerFETTM

Power MOSFET

Single Die MOSFET

Symbol Test Conditions

Maximum Ratings

V

DSS

T

J

= 25°C to 150°C

500

V

DGR

T

J

= 25°C to 150°C, R

GS = 1MΩ

500

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C

55N50

47

A

50N50

53

A

I

DM

T

C = 25°C;

Note 1

55N50

200

A

50N50

220

A

I

AR

T

C = 25°C

55

A

E

AR

T

C = 25°C

60

mJ

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS

5

V/ns

T

J

≤ 150°C, R

G = 2 Ω

P

D

T

C = 25°C

500

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

V

ISOL

50/60 Hz, RMS

t = 1 min

2500

V~

I

ISOL ≤ 1 mA

t = 1 s

3000

V~

M

d

Mounting torque

1.5/13 Nm/lb.in.

Terminal connection torque

1.5/13 Nm/lb.in.

Weight

19

g

V

DSS

I

D25

R

DS(on)

IXFE 55N50

500 V

52 A

80 m

Ω

IXFE 50N50

500 V

47 A

100 m

Ω

t

rr ≤

≤≤≤≤ 250 ns

Preliminary data sheet

G = Gate

D = Drain

S = Source

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

ISOPLUS 227TM (IXFE)

98904 (2/02)

Features

•Low cost direct-copper bonded

aluminium package

•Encapsulating epoxy meets

UL 94 V-0, flammability classification

•2500V isolation

•Low drain to case capacitance

•Low R

DS (on) HDMOS

TM

process

•Rugged polysilicon gate cell structure

•Unclamped Inductive Switching (UIS)

rated

•Low package inductance

•Fast intrinsic Rectifier

•Conforms to SOT-227B outline

Applications

• DC-DC converters

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• Temperature and lighting controls

Advantages

• Easy to mount

• Space savings

• High power density

S

G

S

D

Similar Part No. - IXFE55N50

Manufacturer	Part #	Datasheet	Description
IXYS Corporation	IXFE180N10	78Kb / 2P	HiPerFET-TM Power MOSFET
	IXFE180N20	525Kb / 2P	HiPerFET Power MOSFETs Single Die MOSFET
	IXFE23N100	428Kb / 2P	Single MOSFET Die
	IXFE24N100	428Kb / 2P	Single MOSFET Die
	IXFE34N100	434Kb / 2P	HiPerFET-TM Power MOSFET

More results

Similar Description - IXFE55N50

Manufacturer	Part #	Datasheet	Description
Powersem GmbH	PSMG50-05	149Kb / 4P	HiPerFETTM Power MOSFET
IXYS Corporation	IXFR80N60P3	148Kb / 5P	Polar3TM HiPerFETTM Power MOSFET
	IXFB62N80Q3	149Kb / 5P	HiperFETTM Power MOSFET Q3-Class
	IXFN62N80Q3	132Kb / 5P	HiperFETTM Power MOSFET Q3-Class
	IXFP12N65X2M	574Kb / 6P	X2-Class HiperFETTM Power MOSFET
	IXFN44N80	120Kb / 2P	HiPerFETTM Power MOSFETs Single MOSFET Die
	IXFB82N60Q3	148Kb / 5P	HiperFETTM Power MOSFET Q3-Class
	IXFA80N25X3	243Kb / 6P	X3-Class HiPerFETTM Power MOSFET
	IXFH70N15	55Kb / 2P	HiPerFETTM Power MOSFETs
	IXFN-25N90	144Kb / 4P	HiPerFETTM Power MOSFETs Single Die MOSFET

More results

IXFE55N50 Datasheet(PDF) 1 Page - IXYS Corporation

IXFE55N50 Datasheet(HTML) 1 Page - IXYS Corporation

Similar Part No. - IXFE55N50

Similar Description - IXFE55N50

Html Pages

1 2

Datasheet Download

Link URL