BTW 68 (N)

March 1995

SCR

Symbol

Parameter

Value

Unit

IT(RMS)

RMS on-state current

(180

° conduction angle)

BTW 68

BTW 68 N

Tc=80

°C

Tc=85

°C

30

35

A

IT(AV)

Average

on-state

current

(180

°

conduction angle,single phase circuit)

BTW 68

BTW 68 N

Tc=80

°C

Tc=85

°C

19

22

A

ITSM

Non repetitive surge peak on-state current

( Tj initial = 25

°C)

tp=8.3 ms

420

A

tp=10 ms

400

I2tI2t value

tp=10 ms

800

A2s

dI/dt

Critical rate of rise of on-state current

Gate supply : IG = 100 mA diG/dt = 1 A/µs

100

A/

µs

Tstg

Tj

Storage and operating junction temperature range

- 40 to + 150

- 40 to + 125

°C

°C

Tl

Maximum lead temperature for soldering during 10 s at 4.5 mm

from case

230

°C

TOP 3

(Plastic)

K

A

G

.

HIGH SURGE CAPABILITY

.

HIGH ON-STATE CURRENT

.

HIGH STABILITY AND RELIABILITY

.

BTW 68 Serie :

(UL RECOGNIZED : E81734)

DESCRIPTION

Symbol

Parameter

BTW 68

BTW 68 / BTW 68 N

Unit

200

400

600

800

1000

1200

VDRM

VRRM

Repetitive peak off-state voltage

Tj = 125

°C

200

400

600

800

1000

1200

V

ABSOLUTE RATINGS (limiting values)

FEATURES

The BTW 68 (N) Family of Silicon Controlled Recti-

fiers uses a high performance glass passivated

technology.

This general purpose Family of Silicon Controlled

Rectifiers is designed for power supplies up to

400Hz on resistive or inductive load.

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