PCF8582C-2P datasheet(2/20 Pages) PHILIPS

Part #	PCF8582C-2P

Description	256 x 8-bit CMOS EEPROMS with I2C-bus interface

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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December 1994

2

Philips Semiconductors

Product speciﬁcation

256 x 8-bit CMOS EEPROMS

with I2C-bus interface

PCX8582X-2 Family

FEATURES

• Low power CMOS

– maximum active current 2.0 mA

– maximum standby current 10

µA (at 6.0 V),

typical 4

µA

• Non-volatile storage of 2-Kbits organized as 256 × 8-bits

• Single supply with full operation down to 2.5 V

• On-chip voltage multiplier

• Serial input/output I2C-bus

• Write operations

– byte write mode

– 8-byte page write mode

(minimizes total write time per byte)

• Read operations

– sequential read

– random read

• Internal timer for writing (no external components)

• Power-on reset

• High reliability by using a redundant storage code

• Endurance

– >500 k E/W-cycles at Tamb = 22 °C

• 40 years non-volatile data retention time (typ.)

• Pin and address compatible to

– PCX8570, PCF8571, PCF8572 and PCF8581

– PCX8494X-2, PCX8598X-2 -Family.

DESCRIPTION

The PCX8582X-2 is a 2-Kbit (256

× 8-bit) floating gate

electrically erasable programmable read only memory

(EEPROM). By using an internal redundant storage code

it is fault tolerant to single bit errors. This feature

dramatically increases reliability compared to conventional

EEPROM memories.

Power consumption is low due to the full CMOS

technology used. The programming voltage is generated

on-chip, using a voltage multiplier.

As data bytes are received and transmitted via the serial

I2C-bus, a package using eight pins is sufficient. Up to

eight PCX8582X-2 devices may be connected to the

I2C-bus. Chip select is accomplished by three address

inputs (A0, A1, A2).

Timing of the ERASE/WRITE cycle is carried out

internally, thus no external components are required. Pin 7

(PTC) must be connected to either VDD or left open-circuit.

There is an option of using an external clock for timing the

length of an ERASE/WRITE cycle.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDD

supply voltage

2.5

6.0

V

IDDR

supply current READ

fSCL = 100 kHz

VDD = 3 V

−

60

µA

VDD = 6 V

−

200

µA

IDDW

supply current ERASE/WRITE

fSCL = 100 kHz

VDD = 3 V

−

0.6

mA

VDD = 6 V

−

2.0

mA

IDDSB

supply current STANDBY

VDD = 3 V

−

3.5

µA

VDD = 6 V

−

10

µA

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PCF8582C-2P Datasheet(PDF) 2 Page - NXP Semiconductors

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