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STS4300 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
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STS4300 Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
1 / 8 page N-Channel E nhancement Mode Field E ffect Trans is tor AP R .25 2006 S T S 4300 G D S S OT-23 S G D 1 S amHop Microelectronics C orp. P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( m W ) Max 40V 3.5A 62 @ V GS = 10V 80 @ V GS =4.5V F E AT UR E S S uper high dense cell design for low R DS(ON). R ugged and reliable. S OT-23 package. ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) Parameter S ymbol Unit Drain-S ource Voltage VDS V Gate-S ource Voltage VGS V Drain Current-Continuous @ Ta -Pulsed ID 1.25 A A A W IDM Drain-S ource Diode Forward Current IS Maximum Power Dissipation PD Operating Junction and S torage Temperature R ange TJ, TS TG -55 to 150 C THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-Ambient 100 /W C a a 40 1.25 20 R JA 3.5 15 25 C 70 C Ta= 25 C Ta=70 C 0.76 2.7 A Limit |
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Similar Description - STS4300 |
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