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STS2306 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
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STS2306 Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
1 / 7 page 20 N-Channel E nhancement Mode Field E ffect Transistor Apr,21 2005 ver1.2 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) Parameter S ymbol Limit Unit Drain-S ource Voltage VDS V Gate-S ource Voltage VGS V Drain Current-Continuous @ TJ=125 C -Pulsed ID 2.8 A A A W IDM 12 Drain-S ource Diode Forward Current IS 1.25 Maximum Power Dissipation PD Operating Junction and S torage Temperature R ange TJ, TS TG -55 to 150 C THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-Ambient R thJA 100 /W C 1.25 a a a a b G D S S OT-23 S G D 1 S amHop Microelectronics C orp. P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( m Ω ) Max 20V 2.8A 45 @ V GS = 4.5V 60 @ V GS =2.5V F E AT UR E S S uper high dense cell design for low R DS(ON). R ugged and reliable. S OT-23 package. 8 S T S 2306 |
Similar Part No. - STS2306 |
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Similar Description - STS2306 |
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