M470L3224DT0

Rev. 0.1 Jan. 2002

200pin DDR SDRAM SODIMM

POWER & DC OPERATING CONDITIONS (SSTL_2 In/Out)

Notes 1. Includes

≤ 3nH.

4. These parameters should be tested at the pin on actual components and may be checked at either the pin or the pad in

simulation. The AC and DC input specifications are relative to a VREF envelop that has been bandwidth limited to 200MHZ.

6. These charactericteristics obey the SSTL-2 class II standards.

°C)

Parameter

Symbol

Min

Max

Unit

Note

2.3

2.7

I/O Supply voltage

2.3

2.7

V

I/O Reference voltage

VDDQ/2-50mV

VDDQ/2+50mV

V

1

I/O Termination voltage(system)

V

2

Input logic high voltage

V

4

Input logic low voltage

-0.3

V

4

Input Voltage Level, CK and CK inputs

-0.3

V

Input Differential Voltage, CK and CK inputs

0.3

V

3

Input crossing point voltage, CK and CK inputs

1.15

1.35

V

5

Input leakage current

-2

2

uA

Output leakage current

-5

5

uA

Output High Current(Normal strengh driver)

-16.8

mA

Output High Current(Normal strengh driver)

16.8

mA

Output High Current(Half strengh driver)

-9

mA

Output High Current(Half strengh driver)

9

mA

Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

Parameter

Symbol

Value

Unit

-0.5 ~ 3.6

V

-1.0 ~ 3.6

V

Storage temperature

-55 ~ +150

°C

Power dissipation

12

W

Short circuit current

50

mA

Absolute Maximum Rate