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IRHG567110 Datasheet(PDF) 4 Page - International Rectifier |
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IRHG567110 Datasheet(HTML) 4 Page - International Rectifier |
4 / 14 page IRHG567110 Pre-Irradiation 4 www.irf.com Table 1. Electrical Characteristics For Each N-Channel Device @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter 100KRads(Si)1 300K Rads (Si)2 Units Test Conditions Min Max Min Max BVDSS Drain-to-Source Breakdown Voltage 100 — 100 — V VGS = 0V, ID = 1.0mA VGS(th) Gate Threshold Voltage 2.0 4.0 2.0 4.0 VGS = VDS, ID = 1.0mA IGSS Gate-to-Source Leakage Forward — 100 — 100 nA VGS = 20V IGSS Gate-to-Source Leakage Reverse — -100 — -100 VGS = -20 V IDSS Zero Gate Voltage Drain Current — 10 — 10 µA VDS= 80V, VGS =0V RDS(on) Static Drain-to-Source ➃ — 0.226 — 0.246 Ω VGS = 12V, ID = 1.0A On-State Resistance (TO-39) RDS(on) Static Drain-to-Source ➃ — 0.29 — 0.31 Ω VGS = 12V, ID = 1.0A On-State Resistance (MO-036AB) International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. 1. Part number IRHG567110 2. Part number IRHG563110 VSD Diode Forward Voltage ➃ — 1.2 — 1.2 V VGS = 0V, IS =1.6A International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. For footnotes refer to the last page Radiation Characteristics Fig a. Single Event Effect, Safe Operating Area Table 2. Single Event Effect Safe Operating Area (Per Die) Ion LET Energy Range V DS (V) MeV/(mg/cm2)) (MeV) (µm) @V GS =0V @V GS =-5V @V GS =-10V @V GS =-12.5V @V GS =-15V Br 36.7 309 39.5 100 100 100 100 100 I 59.8 341 32.5 100 100 100 90 25 @V GS =-20V 80 20 0 20 40 60 80 100 120 -20 -15 -10 -5 0 VGS Br I |
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