IRHG567110

Pre-Irradiation

4

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Table 1. Electrical Characteristics For Each N-Channel Device @ Tj = 25°C, Post Total Dose Irradiation ➄➅

Parameter

Units

Test Conditions

Min

Max

Min

Max

Drain-to-Source Breakdown Voltage

100

—

100

—

V

Gate Threshold Voltage

2.0

4.0

2.0

4.0

Gate-to-Source Leakage Forward

—

100

—

100

nA

Gate-to-Source Leakage Reverse

—

-100

—

-100

Zero Gate Voltage Drain Current

—

10

—

10

µA

Static Drain-to-Source

➃

—

0.226

—

0.246

Ω

On-State Resistance (TO-39)

Static Drain-to-Source

➃

—

0.29

—

0.31

Ω

On-State Resistance (MO-036AB)

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

1. Part number IRHG567110

2. Part number IRHG563110

Diode Forward Voltage

➃

—

1.2

—

1.2

V

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

Radiation Characteristics

Fig a. Single Event Effect, Safe Operating Area

Table 2. Single Event Effect Safe Operating Area (Per Die)

Ion

LET

Energy

Range

V

DS

(V)

(MeV)

(µm) @V

GS

=0V @V

GS

=-5V @V

GS

=-10V @V

GS

=-12.5V @V

GS

=-15V

Br

36.7

309

39.5

100

100

100

100

100

I

59.8

341

32.5

100

100

100

90

25

@V

GS

=-20V

80

20

0

20

40

60

80

100

120

-20

-15

-10

-5

0

VGS

Br

I