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SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 642, REV. A
Formerly part number SHD1162/A/B
SILICON SCHOTTKY RECTIFIER
Very Low Forward Voltage Drop
Features:
•
Soft Reverse Recovery at Low and High Temperature
•
Very Low Forward Voltage Drop
•
Low Power Loss, High Efficiency
•
High Surge Capacity
•
Guard Ring for Enhanced Durability and Long Term Reliability
•
Guaranteed Reverse Avalanche Characteristics
Maximum Ratings
Characteristics
Symbol
Condition
Max.
Units
Peak Inverse Voltage
VRWM
-
45
V
Max. Average Forward
Current
IF(AV)
50% duty cycle, rectangular
wave form
15
A
Max. Peak One Cycle Non-
Repetitive Surge Current
IFSM
8.3 ms, half Sine wave
280
A
Non-Repetitive Avalanche
Energy
EAS
TJ = 25 °C, IAS = 3.0 A,
L = 4.4 mH
20
mJ
Repetitive Avalanche Current
IAR
IAS decay linearly to 0 in 1 µs
ƒ limited by TJ max VA=1.5VR
3.0
A
Maximum Thermal Resistance
RθJC
(Junction to Mounting Surface,
Cathode)
.85
°C/W
Max. Junction Temperature
TJ
-
-65 to +175
°C
Max. Storage Temperature
Tstg
-
-65 to +175
°C
Electrical Characteristics
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
VF1
@ 15A, Pulse, TJ = 25 °C
0.64
V
VF2
@ 15A, Pulse, TJ = 125 °C
0.57
V
Max. Reverse Current
IR1
@VR = 45V, Pulse,
TJ = 25 °C
400
µA
IR2
@VR = 45V, Pulse,
TJ = 125 °C
15
mA
Max. Junction Capacitance
CT
@VR = 5V, TC = 25 °C
fSIG = 1MHz,
VSIG = 50mV (p-p)
800
pF
SHD116222
SHD116222B
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